- Tytuł:
- Two-step etch in n-on-p type-II superlattices for surface leakage reduction in mid-wave infrared megapixel detectors
- Autorzy:
-
Ramos, David
Delmas, Marie
Ivanov, Ruslan
Žurauskaitė, Laura
Evans, Dean
Almqvist, Susanne
Becanovic, Smilja
Hellström, Per-Erik
Costard, Eric
Höglund, Linda - Tematy:
-
infrared detector
surface leakage
type-II superlattice
megapixel
n-on-p - Pokaż więcej
- Wydawca:
- Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
- Powiązania:
- https://bibliotekanauki.pl/articles/2204214.pdf Link otwiera się w nowym oknie
- Opis:
- This work investigates the potential of p-type InAs/GaSb superlattice for the fabrication of full mid-wave megapixel detectors with n-on-p polarity. A significantly higher surface leakage is observed in deep-etched n-on-p photodiodes compared to p-on-n diodes. Shallowetch and two-etch-step pixel geometry are demonstrated to mitigate the surface leakage on devices down to 10 μm with n-on-p polarity. A lateral diffusion length of 16 μm is extracted from the shallow etched pixels, which indicates that cross talk could be a major problem in small pitch arrays. Therefore, the two-etch-step process is used in the fabrication of 1280 × 1024 arrays with a 7.5 μm pitch, and a potential operating temperature up to 100 K is demonstrated.
- Dostawca treści:
- Biblioteka Nauki
Artykuł