Temat: mid-infrared - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Surface treatment of GaSb and related materials for the processing of mid-infrared semiconductor devices
Autorzy:: Papis-Polakowska, E.
Tematy:: semiconductor devices
mid-infrared wavelenth range
GaSb; Pokaż więcej
Wydawca:: Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
Powiązania:: https://bibliotekanauki.pl/articles/378417.pdf Link otwiera się w nowym oknie
Opis:: Various chemical treatments of GaSb and related compounds has been studied with the aim to develop procedures of polishing of GaSb substrates, preparation of their surfaces for deposition of metal and dielectric films, for liquid phase epitaxial growth, and finally fabrication of passivating coatings on surfaces of GaSb and its alloys. A broad spectrum of surface characterisation techniques has been used to analyse morphology of the surface and its chemical composition after each of the treatments applied. This allowed us to elaborate a complete set of technological procedures necessary for the fabrication of the efficient GaSb- based photo- and light emitting diodes operating in the midi-infrared wavelength range.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Development of the hybrid distributed Bragg reflectors for mid-infrared applications
Autorzy:: Mikulicz, Monika
Badura, Mikołaj
Rygała, Michał
Smołka, Tristan
Macherzyński, Wojciech
Łozińska, Adriana
Motyka, Marcin
Tematy:: distributed Bragg reflector
mid-infrared
meatal coating
InP
GaAs
FTIR; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Powiązania:: https://bibliotekanauki.pl/articles/59112907.pdf Link otwiera się w nowym oknie
Opis:: In this study, an analysis of the optical performance of two types of distributed Bragg reflector structures based on GaAs and InP material systems was carried out. The structures were designed for maximum performance at 4 μm with their reflectivity achieving between 80 and 90% with eight pairs of constituent layers. To further enhance the performance of these structures, additional Au layers were added at the bottom of the structure with Ti precoating applied to improve the adhesivity of the Au to the semiconductor substrate. The optimal range of Ti layer thickness resulting in the improvement of the maximum reflectivity was determined to be in between 5 and 15 nm.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Material parameters of antimonides and amorphous materials for modelling the mid-infrared lasers
Autorzy:: Piskorski, Ł.
Sarzała, R. P.
Tematy:: material parameters
computer simulation
mid-infrared devices
GaSb-based lasers; Pokaż więcej
Wydawca:: Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Powiązania:: https://bibliotekanauki.pl/articles/175109.pdf Link otwiera się w nowym oknie
Opis:: The proper modelling of semiconductor device operation with full complexity of many interrelated physical phenomena taking place within its volume is possible only when the material parameters which appear in each part of the self-consistent model are known. Therefore, it is necessary to include in calculations the material composition, temperature, carrier concentration, and wavelength dependences in electrical, thermal, recombination and optical models. In this work we present a complete set of material parameters which we obtained basing mostly on the experimental data found in several dozen publications. To refine the number of equations, we restrict the material list to those which are typically used in edge-emitting lasers and vertical-cavity surface-emitting lasers designed for mid-infrared emission.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: An Efficient Algorithm for Steady State Analysis of Fibre Lasers Operating under Cascade Pumping Scheme
Autorzy:: Sujecki, S.
Tematy:: photonics
fibre lasers
optical fiber technology
mid infrared light technology
numerical modeling; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Powiązania:: https://bibliotekanauki.pl/articles/227007.pdf Link otwiera się w nowym oknie
Opis:: We derive an efficient algorithm for the steady state analysis of fibre lasers operating under cascade pumping scheme by combining the shooting method with the Newton-Raphson method. We compare the proposed algorithm with the two standard algorithms that have been used so far in the available literature: the relaxation method and the coupled solution method. The results obtained show that the proposed shooting method based algorithm achieves much faster convergence rate at the expense of a moderate increase in the calculation time. It is found that a further improvement in the computational efficiency can be achieved by using few iterations of the relaxation method to calculate the initial guess for the proposed shooting method based algorithm.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: GaInNAs quantum-well vertical-cavity surface-emitting lasers emitting at 2.33 μm
Autorzy:: Piskorski, Ł.
Sarzała, R. P.
Tematy:: simulation of a diode-laser operation
QW VCSELs
mid-infrared radiation
dilute nitrides; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Powiązania:: https://bibliotekanauki.pl/articles/199958.pdf Link otwiera się w nowym oknie
Opis:: In the present paper, the comprehensive fully self-consistent optical-electrical-thermal-recombination model is used to determine the optimal structure of the possible GaInNAs quantum-well (QW) tunnel-junction (TJ) vertical-cavity surface-emitting lasers (VCSELs) with single-fundamental-mode operation at 2.33 μm wavelength suited for carbon monoxide sensing applications. From among various considered structures, the diode laser with 4-μm TJ and two 6-nm Ga_0.15In_0.85N_0.015As_0.985/Ga_0.327In_0.673As_0.71P_0.29 QWs has the lowest threshold current and seems to be optimal for the above applications. Higher threshold currents are obtained for Ga_0.15In_0.85N_0.015As_0.985/Al_0.138 -Ga_0.332In_0.530As QW structures but the latter can be grown in reactors without P source which are used for fabrication of GaAs-based devices. Both the modelled VCSELs offer a very promising room temperature continuous wave performance and may represent an alternative choice to GaSb-based lasers.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 6.

Tytuł:: Picosecond mode-locked tm-doped fibre laser and amplifier system providing over 20 W of average output power at 1994 nm
Autorzy:: Grześ, P.
Michalska, M.
Świderski, J.
Tematy:: pulsed fibre lasers and amplifiers
mid-infrared
mode-locked lasers
thulium-doped fibres; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Powiązania:: https://bibliotekanauki.pl/articles/220559.pdf Link otwiera się w nowym oknie
Opis:: A mode-locked Tm³⁺-doped fibre laser and amplifier operating at a central wavelength of 1994.3 nm is demonstrated. A thulium oscillator is passively mode-locked by a semiconductor saturable absorber mirror to generate an average power of 17 mW at a fundamental repetition rate of 81 MHz in a short linear cavity. This 2-μm laser train is amplified to an average power to 20.26 W by two double-clad thulium-doped all-fibre amplifiers. The pulse energy, duration and peak power is 250 nJ, 23 ps and 9.57 kW, respectively. This represents one of the highest values of average power at ~2-μm-wavelength for picosecond thulium-doped fibre lasers and amplifiers. The performance of the laser system is described in details.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 7.

Tytuł:: Comparative analysis of GaAs- and GaSb-based active regions emitting in the mid-infrared wavelength range
Autorzy:: Piskorski, Ł.
Frasunkiewicz, L.
Sarzała, R. P.
Tematy:: strained QWs
GaInNAs
GaInAsSb
mid-infrared radiation
numerical analysis
napięte konstrukcje QWs
analiza numeryczna; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Powiązania:: https://bibliotekanauki.pl/articles/200684.pdf Link otwiera się w nowym oknie
Opis:: In the present paper the results of the computer analysis of the GaAs-based and GaSb-based active regions that can be applied in compact semiconductor laser sources of radiation at mid-infrared wavelengths are presented. Quantum well material contents and strain dependencies on the maximal gain are investigated. It is shown that above 3 μm the maximal gain obtained for GaInNAs/AlGaInAs active region is high only for thick, highly-strained GaInNAs QWs with N concentration higher than 2%. Much higher gain in this wavelength range can be obtained for GaInAsSb/AlGaAsSb active region, which offers relatively high gain even at 4.5 μm when the Sb content in GaInAsSb and compressive strain in this layer are equal to 50% and − 2%, respectively.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 8.

Tytuł:: Mid-infrared polarization beam splitter based on square/circular hybrid air holes with wide bandwidth and ultrashort length
Autorzy:: Zheng, Guang-Ming
Tematy:: polarization beam splitter
mid-infrared
photonic crystal fibre
bandwidth
square air hole
circular air hole; Pokaż więcej
Wydawca:: Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Powiązania:: https://bibliotekanauki.pl/articles/2172822.pdf Link otwiera się w nowym oknie
Opis:: A novel mid-infrared polarization beam splitter (PBS) based on GaS is proposed. The high birefringence is achieved by using the cladding structure of alternating arrangement of square and circular air holes as well as introducing double elliptical air holes. The finite element method (FEM) is utilized to investigate the mode coupling characteristics in the proposed PBS. The results show that the highest extinction ratio of 115 dB and shortest length of only 40 μm can be realized at a wavelength of 4 μm. A wide bandwidth of 200 nm ranging from 3.9 to 4.1 μm is obtained.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 9.

Tytuł:: Discussion around IR material and structure issues to go toward high performance small pixel pitch IR HOT FPAs
Autorzy:: Gravrand, Olivier
Baier, Nicolas
Ferron, Alexandre
Rochette, Florent
Lobre, Clément
Bertoz, Jocelyn
Rubaldo, Laurent
Tematy:: mid-wave infrared
focal plane array
high operating temperature
small pitch
modulation transfer function
finite element method; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Powiązania:: https://bibliotekanauki.pl/articles/2204207.pdf Link otwiera się w nowym oknie
Opis:: In the last decade, infrared imaging detectors trend has gone for smaller pixels and larger formats. Most of the time, this scaling is carried out at a given total sensitive area for a single focal plane array. As an example, QVGA 30 μm pitch and VGA 15 μm pitch exhibit exactly the same sensitive area. SXGA 10 μm pitch tends to be very similar, as well. This increase in format is beneficial to image resolution. However, this scaling to even smaller pixels raises questions because the pixel size becomes similar to the IR wavelength, but also to the typical transport dimensions in the absorbing material. Hence, maintaining resolution for such small pixel pitches requires a good control of the modulation transfer function and quantum efficiency of the array, while reducing the pixel size. This might not be obtained just by scaling the pixel dimensions. As an example, bulk planar structures suffer from excessive lateral diffusion length inducing pixel-to-pixel cross talk and thus degrading the modulation transfer function. Transport anisotropy in some type II superlattice structures might also be an issue for the diffusion modulation transfer function. On the other side, mesa structures might minimize cross talk by physically separating pixels, but also tend to degrade the quantum efficiency due to a non-negligible pixel fill factor shrinking down the pixel size. This paper discusses those issues, taking into account different material systems and structures, in the perspective of the expected future pixel pitch infrared focal plane arrays.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 10.

Tytuł:: Sensor performance and cut-off wavelength tradeoffs of III-V focal plane arrays
Autorzy:: James, Jonathan Ch.
Haran, Terence L.
Lane, Sarah E.
Tematy:: infrared focal plane arrays
III-V semiconductor infrared detector technologies
infrared sensor performance modelling
infrared sensor design
mid-wave and longwave infrared sensors; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Powiązania:: https://bibliotekanauki.pl/articles/2204205.pdf Link otwiera się w nowym oknie
Opis:: Infrared detector technologies engineered from III-V semiconductors such as strained-layer superlattice, quantum well infrared photodetectors, and quantum dot infrared photodetectors provide additional flexibility to engineer bandgap or spectral response cut-offs compared to the historical high-performance detector technology of mercury/cadmium/telluride. The choice of detector cut-off depends upon the sensing application for which the system engineer is attempting to maximize performance within an expected ensemble of operational scenarios that define objects or targets to be detected against specific environmental backgrounds and atmospheric conditions. Sensor performance is typically characterised via one or more metrics that can be modelled or measured experimentally. In this paper, the authors will explore the impact of detector cut-off wavelength with respect to different performance metrics such as noise equivalent temperature difference and expected target detection or identification ranges using analytical models developed for several representative sensing applications encompassing a variety of terrestrial atmospheric conditions in the mid-wave and long-wave infrared wavelength bands. The authors will also report on their review of recently published literature concerning the relationships between cut-off wavelength and the other detector performance characteristics such as quantum efficiency or dark current for a variety of detector technologies.
Dostawca treści:: Biblioteka Nauki

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