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Wyświetlanie 1-10 z 191
Tytuł:
Rola Tajwanu w globalnym wyścigu technologii półprzewodnikowych
Taiwan’s Role in the Global Semiconductor Technology Race
Autorzy:
Demianiuk, Marcin
Tematy:
Taiwan’s semiconductor industry
Taiwan Semiconductor Manufacturing Company (TSMC)
global technology competition
innovation in semiconductor manufacturing
geopolitics and technology
Pokaż więcej
Wydawca:
Wydawnictwo Adam Marszałek
Powiązania:
https://bibliotekanauki.pl/articles/62970805.pdf  Link otwiera się w nowym oknie
Opis:
This article provides a detailed analysis of the development of the Taiwanese semiconductor industry, with a particular focus on the Taiwan Semiconductor Manufacturing Company (TSMC) and other major industry players. It explores the evolution of TSMC, whose innovative strategies, supported at one stage by government investment, allowed it to gain a dominant position in the global market. The analysis highlights TSMC’s unique approach to technological and business development, characterized by its ability to overcome limited infrastructure and state support in its early stages. The author also shows how historical challenges, such as initial infrastructure limitations, were transformed into advantages, allowing Taiwan, led by TSMC, to become a key player in the global semiconductor supply chain. The article emphasizes the strategic importance of Taiwan’s semiconductor sector for the global economy and security, especially in the face of rising tensions between China and Taiwan. It also analyzes the potential geopolitical consequences of the conflict in the region and Taiwan’s critical role as a leader in producing advanced semiconductor technologies. The article demonstrates Taiwan’s significant influence on the global technology scene and its undeniable role in maintaining the global balance in the field of innovative technologies.
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Construction and performance of an optical phase and frequency lock of diode lasers
Autorzy:
Kawalec, Tomasz
Bartoszek-Bober, Dobrosława
Opis:
The relative phase and frequency stabilization setups for diode lasers are discussed. The construction and performance of an optical phase lock loop based on integrated phase-locked loop chips are shown along with practical tips facilitating its preparation. The interference pattern between two electronically locked lasers is shown as a proof of the system stability. The fringes contrast is a quantitative indicator of the mean-square phase error. Finally, an example of a very simple frequency offset lock realized with an all-in-one radio chip is also provided.
Dostawca treści:
Repozytorium Uniwersytetu Jagiellońskiego
Artykuł
Tytuł:
Design of a measurement stand with DAQ card and semiconductor laser for recording acoustic signals
Autorzy:
Krawiecki, Z.
Gloger, D.
Tematy:
acoustic signal
recording
photodetector
semiconductor laser
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Wydawca:
Politechnika Poznańska. Wydawnictwo Politechniki Poznańskiej
Powiązania:
https://bibliotekanauki.pl/articles/97505.pdf  Link otwiera się w nowym oknie
Opis:
This article describes the stage of work associated with the implementation of a program- controlled measuring stand for recording the acoustic signals. An attempt has been made for practical implementation of the stand that uses light from a semiconductor laser, modulated by acoustic wave to obtain the information transmitted by this wave. The authors decided to build the hardware construction of the stand with the use of: a PC which serves as the controller, a DAQ card, the light emitter set with a semiconductor laser and the light receiving set capable of processing the received signal into a form suitable for a DAQ card. Moreover, additional equipment used during the examination tests is also described. The software part of the stand includes: device drivers and an application written in LabVIEW environment. The functions of signal processing and analysis, graphical and numerical presentation of the data, recording to file and reading the stored data from a file are all implemented in the application. The achieved stage of a work has been confirmed by sample measurements.
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modelling of changes in the resistivity of semi-insulating materials
Autorzy:
Suproniuk, Marek
Tematy:
resistivity
semiconductor
gallium phosphide
silicon carbide
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Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Powiązania:
https://bibliotekanauki.pl/articles/1849000.pdf  Link otwiera się w nowym oknie
Opis:
Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H-SiC) presented in the article, it is possible to calculate their resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modelling of changes in the resistivity of semi-insulating materials
Autorzy:
Suproniuk, Marek
Tematy:
resistivity
semiconductor
gallium phosphide
silicon carbide
Pokaż więcej
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Powiązania:
https://bibliotekanauki.pl/articles/1849019.pdf  Link otwiera się w nowym oknie
Opis:
Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H-SiC) presented in the article, it is possible to calculate their resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modelling of changes in the resistivity of semi-insulating materials
Autorzy:
Suproniuk, Marek
Tematy:
resistivity
semiconductor
gallium phosphide
silicon carbide
Pokaż więcej
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Powiązania:
https://bibliotekanauki.pl/articles/1849057.pdf  Link otwiera się w nowym oknie
Opis:
Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H–SiC) presented in the article, it is possible to calculatetheir resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Polarization dependence of patterning effects in quantum well semiconductor optical amplifier-based wavelength conversion
Autorzy:
Qin, C
Shen, W
Zhao, J.
Yu, H.
Xu, E
Tematy:
semiconductor optical amplifiers
polarization
patterning effect
Pokaż więcej
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Powiązania:
https://bibliotekanauki.pl/articles/173469.pdf  Link otwiera się w nowym oknie
Opis:
In this paper, polarization dependence of patterning effects in quantum well semiconductor optical amplifier-based wavelength conversion is experimentally and theoretically investigated. The carrier and photon density rate equations are numerically solved by using the time-domain traveling wave model. The material gain calculation, including the strain effect in the active layer, is based on the k·p method. By comparing experimental and computational results, it is demonstrated that the polarization of the injection signal has a significant influence on the gain recovery time of quantum well semiconductor optical amplifier. Under the cross-polarized signals injection, the output signals suffer the weakest and strongest patterning effects both for unstrained and tensile strained quantum well semiconductor optical amplifiers.
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Review on Multi-dimensional Zinc Oxide Nanostructures
Autorzy:
Acharyya, Sarani
Acharyya, Swarnali
Samanta, Pijus Kanti
Tematy:
Band-gap
Morphology
Semiconductor
Zinc Oxide
Pokaż więcej
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Powiązania:
https://bibliotekanauki.pl/articles/1031833.pdf  Link otwiera się w nowym oknie
Opis:
Nanostructured materials are being widely investigated due to their versatile properties leading to promising applications in various areas starting from electronics to environment and medical science. Amongst the various investigated nanostructures, Zinc Oxide (ZnO) is very important because of its versatile properties like high and direct band gap, optical transparency, room temperature ferromagnetism, piezoelectric property and gas sensing property. This mini review article is focused on the morphological study of various ZnO nanostructures starting from hierarchical nanostructures to quantum dots.
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-10 z 191

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